IR (International Rectifier) AUIRF540ZS Configuration: Single Continuous Drain Current: 36 A Current - Continuous Drain (id) @ 25?° C: 36A Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Standard Fet Type: MOSFET N-Channel, Metal Oxide Gate Charge (qg) @ Vgs: 63nC @ 10V Gate Charge Qg: 42 nC Gate-source Breakdown Voltage: +/- 20 V Input Capacitance (ciss) @ Vds: 1770pF @ 25V Minimum Operating Temperature: - 55 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: TO-263-3, D??Pak (2 leads + Tab), TO-263AB Power - Max: 92W Power Dissipation: 92 W Rds On (max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V Resistance Drain-source Rds (on): 26.5 mOhms Series: HEXFET?® Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 4V @ 250?µA